有機金屬化學氣相沉積 (MOCVD) 系統

有機金屬化學氣相沉積 (MOCVD) 系統

Propel emPower GaN 有機金屬化學氣相沉積法 (MOCVD) 系統

Propel emPower GaN 有機金屬化學氣相沉積法 (MOCVD) 系統

Accelerating High Volume Manufacturing of Leading-edge Gallium Nitride (GaN) Devices for Power and RF Applications

Veeco emPower 優勢

Veeco 全新 Propel® emPower™ GaN 有機金屬化學氣相沉積法 (MOCVD) 系統是專為高產量的電力電子產業所設計。此系統採用單晶圓反應器平台,能夠處理 8 英吋與 12 英吋晶圓,emPower 系統可鍍出高品質的 GaN 薄膜,足以應付高效率電力電子裝置的生產。Veeco’s proprietary TurboDisc®, IsoFlange™ and SymmHeat™ technologies ensure the new systems offer homogenous laminar flow and uniform temperature profile across the entire wafer, resulting in unmatched within-wafer uniformity. Additionally, they provide excellent run-to-run repeatability without requiring an in-situ cleaning step, resulting in high uptime with more than 150 runs between maintenance. Engineered to offer versatility, the systems can process six- and eight-inch wafers in single-wafer mode, as well as two- to four-inch wafers in mini-batch mode. The single-wafer reactor platform’s wide process window coupled with capacity scalability provides the most flexible solution in the industry today.  

  • Unparalleled performance for thickness and composition uniformity, dopant control and defects
  • TurboDisc technology with exceptional long campaign production throughput
  • Best-in-class flexibility with wide process window and ease of operation
  • Lowest cost of ownership with industry’s highest production uptime

 

 

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